| 1. | Single layer growth of strained epitaxy at low temperature
低温下应变外延层的单层生长 |
| 2. | A study of sige si epitaxial layers growth at the low temperature
类铁电薄膜低温外延层状生长研究 |
| 3. | Transfer characteristics and solid layer growth in a bubble column crystallizer
气泡塔熔融结晶器中传递与晶层生长 |
| 4. | The studies confirm that textured c60 film is a two dimensional nucleation and layer - by - layer growth mechanism
由实验结果可以推断出c _ ( 60 )单晶是一种二维成核，层?层生长机制。 |
| 5. | We found that the coating could restrain the frost layer growth to certain extent . the coating shows a good fastness and repetitive - use performance
研究发现,这种涂层能够在一定程度上抑制霜层的生长,并且这种涂层牢固性好,重复使用性高。 |
| 6. | With optimized buffer layer growth parameters , gan epilayer with improved quality has been grown , whose fwhm of ( 0002 ) plane dc - xrd rocking curve is 6 arcmin
以优化的缓冲层生长条件得到质量有明显改善的gan外延层， gan薄膜的( 0002 )面双晶dc - xrd扫描的半高宽为6arcmin 。 |
| 7. | A mathematical model for the particles layering growth is developed based on the mechanism of layering growth and law of conservation of mass . a formula for calculating the particle diameter was also deduced
依据颗粒层式成长机理，根据物质守恒原理建立了颗粒层式生长的数学模型，提出了粒径长大的计算式。 |
| 8. | The composite films exhibited linear ( or nearly linear ) , uniform , and regular layer - by - layer growth in a wide range of deposition solution concentrations . the films showed a uniform and smooth surface in a large area and good environmental and thermal stabilities
复合膜在广泛的沉积浓度范围内均表现出线性(或近似线性)的层接层均匀规则的生长，膜表面在很大面积内比较均匀平坦。 |
| 9. | Combining the unstable heat conduction in crystal layer with heat transfer of undeveloped slug flow in a vertical tube , a time - progression model of crystal layer growth in the bubble column crystallizer pipe is proposed , the calculation results from the numerical method agree well with the experimental data . under certain operating conditions , the periodical arrival of gas plugs can cause crystallization and partial re - melting occur in the crystal - melt interface
结合未充分发展弹状流的传递特征和晶层内不稳定导热，提出了鼓泡塔结晶器管内晶层生长的时间级联模型,与实验值吻合良好.特定操作条件下，随弹状泡的到来和离去，结晶界面可发生结晶-部分重熔 |
| 10. | Then we grew the material with different active layer growth temperature , different v / ratio , different doping concentration and form . after that , we tested these materials by photoluminescence ( pl ) technology , and got the best growth condition according to the results of photoluminescence spectra . our result was that the active layer growth temperature was 700 , v / ratio was 60 , waveguide layer doping was gradual changed ( n - type doping with sih4 from 190sccm to 590sccm , p - type doping with dmzn from 90sccm to 490sccm )
然后在不同的有源区生长温度、 /比、掺杂方式及浓度情况下对激光器材料进行外延生长，并利用光荧光( pl )技术对不同生长条件下外延材料的光致发光特性进行了测试对比，结果表明在下列条件下生长出来的材料具有更好的光学和电学性能：有源区生长温度在700 、波导层/比选择为60 、 n型波导渐变掺杂190sccm - 590sccm的sih _ 4 、 p型波导渐变掺杂90sccm - 490sccm的dmzn 。 |
